Electrical manipulation of a topological antiferromagnetic state

Electrical manipulation of a topological antiferromagnetic state

Nature, Published online: 20 April 2020; doi:10.1038/s41586-020-2211-2

Room-temperature electrical switching of a topological antiferromagnetic state in polycrystalline Mn3Sn thin films is demonstrated using the same protocol as that used for conventional ferromagnetic metals.
Source: Nature

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